High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with $0.1 \leq x \leq 0.2.$ NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films

VACANCY-MEDIATED ATOMIC TRANSPORT IN NANO-CRYSTALS

International audienceAtomic transport in nano-crystals is still poorly studied experimentally. However, the knowledge of atomic transport kinetic and of the mechanisms allowing atoms to move in a volume exhibiting nano-scale dimensions (< 100 nm) is important for i) improving our fundamental knowledge concerning point defects' formation and migration energies, and atom-point defect interactions in nano-structures, as well as for ii) predicting mass transport in nano-structures, allowing the design of nano-structure fabrication processes to be developed at lower cost. In this article, atom probe tomography measurements were used to investigate the Ge distribution in 40 nm-wide Si nano-crystals in which the Ge flux was found to be ten times faster than in the bulk of a Si mono-crystal. The Ge atoms were found to be randomly distributed in the nano-crystals. No extended defect was found being able to explain an increase of Ge transport kinetic in the nano-crystals. Consequently, a scenario based on a higher equilibrium vacancy concentration at the nano-crystal surface (or interface) is proposed in order to explain the faster atomic kinetic measured in Si nano-crystals

Te homogeneous precipitation in Ge dislocation loop vicinity

International audienceHigh resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te2þ or Te1þ ions

Effect of external stress on the Fe–Cr phase separation in 15-5 PH and Fe–15Cr–5Ni alloys

The effect on Fe–Cr phase separation of a uniaxial stress during thermal ageing at 4251C is investigated on a Fe–15Cr–5Ni steel, a model alloy of commercial 15-5 PH steel. The applied stress is shown to accelerate the ageing kinetics, and influence the morphology of Cr rich domains. A dependence of the phase separation decomposition kinetics on the relative orientations of the load and the crystal local orientation has also been observed

SEARCH FOR NEUTRINO OSCILLATION AT BUGEY

The high flux of low energy [MATH]e produced by the core of a PWR reactor of Bugey power plant has been used to search for evidence of neutrino oscillations through the inverse beta decay reaction [MATH]e + p → e+ + n. Measurements have been performed at two distances (13.5 and 18.5m). About 50 000 [MATH]e events have been collected at the first position and 25 000 [MATH]e events at the second one. Data analysis is almost completed

B diffusion in implanted Ni2Si and NiSi layers

B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si

Mechanical design report of the barrel liquid argon presampler

The note describes the mechanical design of the Atlas barrel presampler and its evolution since the publication of thecalorimeter TDR in December 9

Position resolution and particle identification with the ATLAS EM calorimeter

In the years between 2000 and 2002 several pre-series and series modules of the ATLAS EM barrel and end-cap calorimeter were exposed to electron, photon and pion beams. The performance of the calorimeter with respect to its finely segmented first sampling has been studied. The polar angle resolution has been found to be in the range 50-60 mrad/sqrt(E (GeV)). The neutral pion rejection has been measured to be about 3.5 for 90% photon selection efficiency at pT=50 GeV/c. Electron-pion separation studies have indicated that a pion fake rate of (0.07-0.5)% can be achieved while maintaining 90% electron identification efficiency for energies up to 40 GeV.Comment: 32 pages, 22 figures, to be published in NIM

Pion and proton showers in the CALICE scintillator-steel analogue hadron calorimeter

Showers produced by positive hadrons in the highly granular CALICE scintillator-steel analogue hadron calorimeter were studied. The experimental data were collected at CERN and FNAL for single particles with initial momenta from 10 to 80 GeV/c. The calorimeter response and resolution and spatial characteristics of shower development for proton- and pion-induced showers for test beam data and simulations using Geant4 version 9.6 are compared.Comment: 26 pages, 16 figures, JINST style, changes in the author list, typos corrected, new section added, figures regrouped. Accepted for publication in JINS

Measurement of the cross-section and charge asymmetry of WW bosons produced in proton-proton collisions at s=8\sqrt{s}=8 TeV with the ATLAS detector

This paper presents measurements of the $W^+ \rightarrow \mu^+\nu$ and $W^- \rightarrow \mu^-\nu$ cross-sections and the associated charge asymmetry as a function of the absolute pseudorapidity of the decay muon. The data were collected in proton--proton collisions at a centre-of-mass energy of 8 TeV with the ATLAS experiment at the LHC and correspond to a total integrated luminosity of 20.2~\mbox{fb^{-1}}. The precision of the cross-section measurements varies between 0.8% to 1.5% as a function of the pseudorapidity, excluding the 1.9% uncertainty on the integrated luminosity. The charge asymmetry is measured with an uncertainty between 0.002 and 0.003. The results are compared with predictions based on next-to-next-to-leading-order calculations with various parton distribution functions and have the sensitivity to discriminate between them.Comment: 38 pages in total, author list starting page 22, 5 figures, 4 tables, submitted to EPJC. All figures including auxiliary figures are available at https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/STDM-2017-13